We show GHz modulation in a 2.5 microm radius silicon micro-ring, with only 150 mV peak-peak drive voltage and an electro-optic modal volume of only 2 microm(3). The swing voltage and the micro-ring modulator are the smallest demonstrations so-far in silicon. The presented approach lays the ground work for a new class of high speed low voltage modulators enabling, seamless integration of nanophotonics with low voltage digital CMOS nano-electronics.
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Manipatruni et al. (2010) studied this question.
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