Al surfaces grown epitaxially on GaAs(100) substrates exhibit a nearly atomically smooth surface morphology which permits the formation of various clean and impurity-induced surface reconstructions. The Al(100)-c(2×2) reconstruction can be ascribed to a two-dimensional Fermi-surface instability. Arguments are given that suggest a charge-density-wave mechanism.
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Ludeke et al. (1981) studied this question.
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