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Internal uniaxial stress effects on the degenerate P-like C2 subband Bloch states of Si-doped (001) InGaAs single quantum wells (SQWs) have been studied using polarization-resolved infrared spectroscopy. It is found that a tetragonal strain perturbation of the crystal potential produces a splitting between the TM and TE active intersubband transitions. The magnitude of the linear strain intersubband deformation potential of InGaAs quantum wells is 3 eV.
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Peng et al. (1993) studied this question.
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