We present a determination of the complex dielectric function of si(111) 2 multiplied by 1, GaAs(110) and GaP(110) surfaces by using polarized Surface Differential Reflectivity technique. The effective number of electrons per atom participating in the optical transitions is calculated for energies up to 4. 0 ev for each surface.
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Cricenti et al. (1988) studied this question.
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