Electron spin resonance in InGaAs/GaAs heterostructures with a manganese δ layer

The static and high-frequency dynamic magnetic properties and photoluminescence of two-dimensional semiconductor GaAs heterostructures containing an InGaAs quantum well and a thin manganese layer (δ layer) are studied. It is found that the Curie temperature is T C ≈ 35 K and the magnetic anisotropy field of the ferromagnetic manganese δ layer is H a ≈ 600 Oe. The spin resonance spectrum exhibits a line in weak fields (from −50 to 100 Oe), which is observed in the same temperature interval T < 40 K where the ferromagnetic ordering of the manganese δ layer occurs. This line is probably caused by the nonresonance contribution of the spin-dependent scattering of charge carriers to the negative magnetic resistance. The dependence of the degree of polarization of photoluminescence on the magnetic field also points to the ferromagnetic behavior of the manganese δ layer.