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A Coulomb gap in the density of states is inferred from variable-range-hopping measurements in two dimensions in a gated GaAs/AlₓGa_1-xAs heterostructure. For large hopping lengths the Coulomb interaction is screened by a metallic gate, and a universal crossover to Mott hopping at low temperatures is observed. Excellent agreement with theory is achieved by adjusting a single combination of constants associated with variable-range hopping. This change in constants is explained by correlated hopping. The Coulomb interaction is not screened by the two-dimensional electron layer.
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Keuls et al. (1997) studied this question.
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