In this paper, the inevitable unbalanced current of parallel-connected Silicon Carbide (SiC) MOSFETs is analyzed, and the corresponding balanced methods are proposed. Firstly, the transient unbalanced current according to different gate resistance (Rg) and gate-source capacitance (Cgs) between two parallel-connected SiC MOSFETs are investigated. Then, the appropriate gate additional resistance is used to suppress the transient unbalanced current through realization of gate drive delay. Finally, the proposed scheme is verified by both simulation and experimental results.
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Du et al. (2014) studied this question.
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