Photopumped Lasing Characteristics in Green-to-Yellow Range for BeZnSeTe II–VI Compound Quaternary Double Heterostructures Grown on InP Substrates

The photopumped lasing characteristics of double heterostructures with a BeZnSeTe active layer grown on InP substrates were systematically investigated. Green-to-yellow lasing emissions from 538 to 570 nm were observed at room temperature (RT). The threshold excitation power density ( P th ) was approximately 30 kW/cm 2 . From the temperature dependence of P th , stable lasing emissions were obtained up to 353 K. The characteristic temperatures of P th were 106 to 140 K above RT. The relationship between the threshold gain ( G th ) and the threshold carrier density ( N th ) was estimated from the cavity length dependence of P th and by waveguide analysis. Using the relationship between G th and N th , the threshold current densities ( J th ) of electrically pumped BeZnSeTe laser diode structures were calculated to be less than 1.3 kA/cm 2 . J th decreases as the lasing wavelength increases from 538 to 570 nm. The above results demonstrate that BeZnSeTe is a promising active-layer material for high-performance green-to-yellow LDs.