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Power control in applications with a line voltage of 3 kV DC and more today is managed by GTOs and IGCTs. The IGBT, a device with several advantages compared to power semiconductors in thyristor structure (low requirements regarding the driving unit, easy cooling as a result of the isolated structure) is fully developed and introduced up to a blocking voltage range of 3.3 kV. Consequently, at the moment IGBT-technology can only be used by series connection of at least two IGBT-modules in these high voltage applications. This leads to several complications in driving, controlling and isolating the modules. With the development of 6.5 kV IGBT-modules, eupec makes a power semiconductor available, which combines the advantages of IGBT-technology with the high blocking voltage capability of GTOs and IGCTs without the problems of series connection.
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Auerbach et al. (2003) studied this question.