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Abstract Amorphous silicon nitride films have been prepared by the glow-discharge decomposition of a wide range of ammonia/silane gas mixtures. In particular, samples prepared from mixtures containing very small amounts of ammonia have been investigated. The dark- and photoconductivities, the optical gap and the thermoelectric power have been measured as a function of the volume ratio of the deposition gases, denoted by R. A range of specimens has also been prepared in a junction configuration, and the electron and hole mobilities of these has been determined. The results of all of the measurements show a systematic and continuous variation with R. Extended-state conduction predominates throughout, and the majority carriers are electrons. For R 3 insulating near-stoichiometric silicon nitride is produced.
Dunnett et al. (Sat,) studied this question.