This paper studies the Schottky barrier height (SBH) modulation effect induced by dipoles, which several types of impurity atoms generate at the nickel silicide (NiSi)/silicon (Si) interface, through both first-principles calculations and experimental methods. Based on these understandings, we discuss their applicability to the DCS junction, leading to a principle for choosing dopants.
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Yamauchi et al. (2007) studied this question.
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