We measured time-resolved soft x-ray absorption of photoexcited silicon by means of pump-probe spectroscopy, using a picosecond soft x-ray pulse from femtosecond laser-produced plasma as a probe. We observed a 5% increase in the absorption caused by 1010 W/cm2 intensity laser pulse irradiation near the LII,III edge at 100 eV. The change was observed only when the laser and the soft x-ray pulses overlapped on the sample both in time and space.
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Nakano et al. (1999) studied this question.
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