Wafer-Scale Bias/Gate Voltage Dual Modulation High-Performance 4H-SiC MOSFET Ultraviolet Photodetector

Ultraviolet (UV) light detection is very important for human production and life. However, existing ultraviolet photodetectors of various types all possess some inevitable shortcomings in terms of material or device performance. Herein, a wafer-scale 4H-SiC MOSFET UV photodetector is proposed, which enables the detection of light from 240 to 380 nm. The device achieves a pA-level dark current and maintains a nA-level dark current at 2,100 V bias. Significantly, by modulating the bias voltage to optimize the carrier transport and the gate voltage to change the conductivity of the inverse layer, the device could achieve bias/gate voltage dual modulation. Under 365 nm illumination, the responsivity, detectivity, and photoconductivity gain of the device reach 5.16 × 103 A/W, 1.46 × 1013 Jones, and 1.76 × 104, respectively. The wafer-scale fabrication process ensures its potential for reconfigurability and mass production, providing core device support for the development of high-performance, integrable smart UV optoelectronic systems.