Model for the Temperature Dependence of the Metastable 2 × 1 Reconstructed Silicon (111) Surface

We develop a model based on the idea of dangling-bond-mediated attractive electron-electron interactions to describe the metastably reconstructed 2×{}1 Si(111) surface and its elimination with increasing annealing temperature. It is found that the resultant picture is able to correlate a considerable amount of experimental data.