Raman spectroscopy of electrochemically gated graphene transistors: Geometrical capacitance, electron-phonon, electron-electron, and electron-defect scattering

This is a comprehensive Raman scattering study of electrochemically gated graphene transistors. A robust, highly accurate determination of the Fermi level, electron-phonon coupling, and defect scattering rates is achieved. Fermi energies as high as 700 meV above the Dirac point were achieved in ambient conditions, without damaging graphene. This opens exciting perspectives for optoelectronics.