Mobility of Charge Carriers in Semiconducting Layer Structures

This is the authors' abstract. We don't add key points for this paper.

The electrical resistivities and the Hall constants of the compound semiconductors GaSe, MoS₂, MoSe₂, and WSe₂, which crystallize in layer structures, have been measured at temperatures ranging from 100 to 700^∘{}K. The Hall mobilities derived from these measurements are all of the order of 100 cm²/V sec at room temperature, and they exhibit a temperature dependence of the form μ∝(TT₀)^-n, where $n=2.1$ for GaSe, $n=2.6$ for MoS₂, and $n=2.4$ for MoSe₂ and WSe₂. A short-range interaction is discussed which couples the charge carriers in highly anisotropic layer structures to the nonpolar optical lattice modes. The relatively low room-temperature mobilities as well as the high values of the exponents n are explained in terms of the proposed interaction.