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Two qualitatively different structural models are currently popular for the stable 2×{}1 superstructure characteristic of the Si(100) surface. We report the results of realistic self-consistent calculations of the electronic spectrum for both. Comparison with uv photoemission data clearly favors the pairing model over the vacancy model. Our results on surface Fermi-level pinning and bond saturation support this conclusion.
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Appelbaum et al. (1975) studied this question.
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