Insulated power supply for gate drivers up to 40 kV for medium‐voltage direct current applications

The proposed study is about the design and experimental results of a power supply for gate drivers that can sustain 40 kV of insulation voltage with a parasitic capacitance of 4 pF. The first section focuses on insulation materials suitable for medium voltage capabilities and therefore to justify the use of polyesterimide and Teflon polytetrafluoroethylene materials. In a second step, experimental results are provided to guaranty that with a thickness of 1 mm of the insulation material, an insulation voltage of 40 kV is provided. Then, a DC–DC converter based on a series‐series topology is designed and lead to a physical prototype of 5 W. The measured parasitic capacitance is 4 pF between the primary and the secondary sides.