Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf0.8Zr0.2O₂, High Endurance and Breakdown Recovery

We demonstrate a nonvolatile single transistor ferroelectric gate memory device with ultra-thin (5.5 nm) Hf 0.8 Zr 0.2 O 2 (HZO) fabricated using a self-aligned gate last process. The FETs are fabricated using silicon-on-insulator wafers, and the ferroelectric is deposited with atomic layer deposition. The reported devices have an ON/OFF drain current ratio of up to 10 6 , a read endurance of <tex-math notation="LaTeX">>10¹⁰ </tex-math> read cycles, and a program/erase endurance of 10 7 cycles. Furthermore, healing of the transistor after gate insulator breakdown is demonstrated.