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A bound-exciton (BE) emission was studied for high-purity Ga x In 1- x P layers grown at various temperatures by chloride VPE. In contrast to the results for the metalorganic-VPE layers, its photon energy did not depend on growth temperature in the range examined (560–760°C). Furthermore, two faint bands were iuavestigated which were observed at photon energies lower than that of BE. They were interpreted from their dependences on temperature and excitation intensity as being due to a donor-acceptor pair emission superimposed by a phonon replica of BE, and to a phonon replica of BE with emission of two phonons.
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Kodama et al. (1986) studied this question.
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