Configurable multi-state non-volatile memory behaviors in Ti₃C₂nanosheets

MXenes have drawn considerable attention in both academia and industry due to their attractive properties, such as a combination of metallic conductivity and surface hydrophilicity. However, to the best of our knowledge, the potential use of MXenes in non-volatile resistive random access memories (RRAMs) has rarely been reported. In this paper, we first demonstrated a RRAM device with MXene (Ti3C2) as the active component. The Ti3C2-based RRAM exhibited typical bipolar switching behavior, long retention characteristics, low SET voltage, good mechanical stability and excellent reliability. By adjusting different compliance currents in the SET process, multi-state information storage was achieved. The charge trapping assisting hopping process is considered to be the main mechanism of resistive switching for this fabricated Ti3C2-based RRAM, which was verified by conductive atomic force microscopy (C-AFM) and Kelvin probe force microscopy (KPFM). Moreover, this flexible Ti3C2-based RRAM, with good mechanical stability and long retention properties, was successfully fabricated on a plastic substrate. Ti3C2-based RRAMs may open the door to additional applications and functionalities, with high potential for application in flexible electronics.