Enhancing Speed and Stability of Polarization Reversal in Predominantly a/b‐Axes‐Oriented Bi₄Ti₃O₁₂ Thin Films Deposited on Pt/Ti/SiO₂/Si

Bi 4 Ti 3 O 12 ‐based thin films of a/b‐ axes orientation grown on standard‐type Pt/Ti/SiO 2 /Si substrates are desirable for designing reliable ferroelectric devices. Herein, a/b‐ axes‐oriented and randomly oriented Bi 4 Ti 3 O 12 thin films are deposited on Pt/Ti/SiO 2 /Si through a sol–gel process. As expected, the a/b ‐axes‐oriented films show a higher remnant polarization than that of randomly oriented films. The characteristic time τ of domain reversal in 74% a/b ‐axes‐oriented Bi 4 Ti 3 O 12 films is 1.1 ms, notably shorter than that ( τ > 2.5 ms) for randomly oriented films. The dynamic hysteresis scaling relations of the randomly oriented 56% and 74% a/b‐ axes‐oriented Bi 4 Ti 3 O 12 films take the forms of ⟨ A ⟩ ∝ f −0.106 E 0 1.667 , ⟨ A ⟩ ∝ f −0.035 E 0 0.952 , and ⟨ A ⟩ ∝ f −0.026 E 0 0.600 , respectively. The difference indicates that domain reversal in Bi 4 Ti 3 O 12 films of predominant a/b‐ axes orientation exhibits higher stability compared with randomly oriented Bi 4 Ti 3 O 12 films under varying electric fields E ( E 0 , f ). The enhancing speed and stability of polarization reversal in predominantly a/b‐ axes‐oriented Bi 4 Ti 3 O 12 films can be understood in terms of their layered‐perovskite structure, large columnar grains, oxygen vacancies mobility, domain states, and polarization switching mechanism.