We examine how the short-range part of the electron--hole exchange interaction influences the strain-induced variations of the oscillator strength in ZnO films. Our model enables us to account for the surprisingly small oscillator strength of the A exciton in E⊥c polarization without having to invoke any inverted valence-band scheme. We then conclude that the valence-band physics is very similar in both ZnO and GaN.
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Bernard Gil (2001) studied this question.
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