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Mixed crystals of have been prepared by a halogen vapor transport method. The entire composition range was covered and electroluminescent diodes were made. The dependence of emission energy at 77°K on composition was determined. Conditions were determined for the epitaxial deposition of mixed crystal layers on pure needs. A halogen‐flow system was used, and liquid Ga‐In solutions were used in the source. It was discovered that considerable fractionation occurred in the deposition reaction.
Henry T. Minden (Fri,) studied this question.