Infrared lasing from single-crystalline InN nanobelts grown by metal organic chemical vapor deposition was demonstrated. Transmission electron microscopy studies revealed that the InN nanobelts of rectangular cross section grew along [110] direction and were enclosed by ±(001) and ±(11¯0) planes. The infrared lasing action was observed at 20K in the InN nanobelts grown on an amorphous silicon nitride coated silicon substrate by continuous wave laser pumping.
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Hu et al. (2007) studied this question.
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