Real‐Time Electrical Monitoring of Plastic Deformation in Tungsten Nanowires

The detection of plastic deformation in nanodevices remains a significant challenge, particularly given that these atomic‐scale deformation events often lead to functional failure. Applying synchronized in situ transmission electron microscopy and real‐time resistance monitoring, we establish a quantitative correlation between deformation dynamics and electrical response in body‐centered cubic tungsten nanowires. Specifically, the resistance evolution signatures not only distinguish dislocation slip from deformation twinning but also capture discrete twin boundary (TB) migration events mediated by screw dislocation cross‐slip and dissociation, thereby revealing the microscopic mechanisms of TB evolution and structural damage. Theoretical calculations further quantify the resistivity variations among different TB types, confirming that the observed resistance response originates from electron scattering by specific defect structures. This study provides a critical methodology for early damage warning and failure mechanism diagnosis in functional nanodevices through straightforward electrical measurements.