Silicon-doped GaAs crystals grown either by the Bridgman or LEC technique have been irradiated with fast neutrons to doses in the range 1018 to 1019 n0 cm-2, and subsequently isochronally annealed up to 625 degrees C. At about 350 degrees C the concentration of SiAs defects increases but subsequently falls when the temperature exceeds 500 degrees C. The concentration of SiGa shows the opposite behaviour. The observations are explained by an initial release of VAs defects into the crystal followed by a release of VGa. EPR measurements on the same samples show the AsGa anti-site spectrum and a broad resonance near g=2 attributed by others to a vacancy. This latter centre anneals between 350 and 500 degrees C but shows no changes at lower temperatures. The results are discussed in relation to models for the migration of vacancies.
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Maguire et al. (1986) studied this question.
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