From magnetotransport measurements it is generally believed that Hg-VI compounds show zero gap semiconducting behavior. Applying combined angle-resolved photoemission and inverse photoemission spectroscopy on HgSe(001) c(2×2), we observe a positive fundamental gap of about 0.42 eV and a surface related state close to the Fermi level above the conduction band minimum. Following the results of this direct determination of the →k-resolved band structure, previous experiments favoring zero gap models of Hg-VI compounds need to be reinterpreted.
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Gawlik et al. (1997) studied this question.
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