Defects in ultrafast quenched aluminum-doped silicon

Deep level transient spectroscopy has been applied to the study of defects in ultrafast quenched (cw laser irradiated) aluminum-doped silicon. Iron-aluminum pairs, with energy levels H(0.13) and H(0.20), are observed. A third hole trap, H(0.52), is identified as associated with the aluminum-vacancy center. No quenched-in interstitial aluminum is detected. The results support the view that dopant diffusion in silicon takes place primarily via vacancies at high temperature.