Electron-beam-induced dislocation climb in ZnSe

Dislocations in solution-grown ZnSe were observed to climb when exposed to a focused 100-kV electron beam in an electron microscope. The resulting dislocation networks are complex and are generated in a three-step sequence: (1) existing dislocations extend their length by forming dipoles, (2) a thin layer of radiation-damaged material forms at the beam entry surface, and (3) dislocation loops originating at the damaged layer grow into the sample bulk. From a diffraction contrast analysis the loops were determined to be of the extrinsic type. From annealing experiments it is concluded that the beam-induced climb involves vacancy emission at the dislocation and that the process is energized by electron-hole recombination.