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The emphasis of this paper is to show how the design of the Integrated Gate Commutated Thyristor (IGCT) and the commutation inductance of the drive influence the dynamic over-voltage in the current source inverter (CSI). Different semiconductor design tools to reduce dynamic over-voltage are described and the impact on other parameters such as device losses is presented. Differences between the application in CSI and voltage source inverter (VSI) are discussed.
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Weber et al. (2002) studied this question.