Stress in thermal SiO2 during growth

Stress present in thermal SiO2 at temperatures during growth in wet O2 has been measured as a function of growth temperature. During growth at 950 °C and below, compressive stress on the order of 7×109 dyn/cm2 is generated in the SiO2. During growth at 975 and 1000 °C, the SiO2 grows in a stress-free state. The results, which are consistent with a viscous flow point somewhere between 950 and 975 °C, are of value in avoiding mechanical failure effects in integrated-circuit processing.