Measurements of Parameters of the Thermal Model of the IGBT Module

In this paper, the problem of how to describe the thermal properties of the insulated-gate bipolar transistor (IGBT) module with the use of the compact thermal model is considered. This model makes it possible to calculate internal temperature of every semiconductor device included in this module with self-heating phenomena and mutual thermal couplings between these devices taken into account. A new method of measuring parameters of the thermal model of devices contained in the considered module is proposed, and the accuracy of this method is discussed. Some results of measurements of the considered parameters are presented, and uneven distribution of temperature in the investigated module in selected conditions of its power supply is evaluated. Differences between the measured waveforms of the internal temperature of components of the IGBT module and its casings are discussed.