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June 3, 2026APL MaterialsOpen Access

Voltage-assisted all-optical switching in magnetic tunnel junctions based on Tb/Co multilayers

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Authors

QTQuoc Trung TrinhJLJun-Xiao LinBKB. Kunyangyuen

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Overview

Randomized trial investigates optical switching behavior in magnetic tunnel junctions, highlighting implications for memory applications.

Key Points

  • The research aims to explore how bias voltage affects the optical switching performance of Tb/Co-based magnetic tunnel junctions.
  • Investigated the optical switching behavior of an 80-nm diameter Tb/Co-based magnetic tunnel junction (MTJ) device.
  • Analyzed the effects of varying bias voltages, focusing on 200 and 400 mV.
  • Conducted thermal analysis of all-optical switching devices under different bias polarities.
  • Optimal switching probability reached at bias voltages of 200 and 400 mV.
  • High bias induced a temperature difference of 5–10 K affecting magnetic anisotropy.
  • Under negative voltage polarity, enhanced magnetization reversal was observed during laser pulses.

Cite This Study

Trinh et al. (2026) studied this question.

synapsesocial.com/papers/6a1fc47adee9eb8c0dce5fe8https://doi.org/10.1063/5.0331782
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