Comparison of low frequency charge noise in identically patterned Si/SiO2 and Si/SiGe quantum dots

We investigate and compare the charge noise in Si/SiO2 and Si/SiGe gate defined quantum dots with identically patterned gates by measuring the low frequency 1/f current noise through the biased quantum dots in the coulomb blockade regime. The current noise is normalized and used to extract a measurement of the potential energy noise in the system. Additionally, the temperature dependence of this noise is investigated. The measured charge noise in Si/SiO2 compares favorably with that of the SiGe device as well as previous measurements made on other substrates suggesting Si/SiO2 is a potential candidate for spin based quantum computing.