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December 12, 2013Advanced Materials391 citationsOpen Access

2‐Dimensional Transition Metal Dichalcogenides with Tunable Direct Band Gaps: MoS2(1–x)Se2x Monolayers

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JMJohn MannQMQuan MaPOPatrick Odenthal

Key Points

  • This research aims to explore the tunability of direct band gaps in MoS2(1-x)Se2x monolayers based on composition.
  • Single-layer films are prepared using a mixture of organic selenium and sulfur precursors along with solid molybdenum source.
  • The composition is varied to assess its effect on bandgap.
  • Measurements determine direct bandgap properties ranging from 1.87 eV to 1.55 eV.
  • Direct band gaps scale almost linearly with composition from 1.87 eV (pure MoS2) to 1.55 eV (pure MoSe2).
  • Bandgap engineering is achieved by altering the composition of the monolayers.

Abstract

MoS2(1-x) Se2x single-layer films are prepared using a mixture of organic selenium and sulfur precursors as well as a solid molybdenum source. The direct bandgaps are found to scale nearly linearly with composition in the range of 1.87 eV (pure single-layer MoS2 ) to 1.55 eV (pure single-layer MoSe2 ) permitting straightforward bandgap engineering.

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Cite This Study

Mann et al. (2013) studied this question.

synapsesocial.com/papers/6a1fdc587110a651dc049828https://doi.org/10.1002/adma.201304389
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