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We present the fabrication and characterization of an artificial crystal structure formed from a thin film of silicon that has a full phononic band gap for microwave X-band phonons and a two-dimensional pseudo-band gap for near-infrared photons. An engineered defect in the crystal structure is used to localize optical and mechanical resonances in the band gap of the planar crystal. Two-tone optical spectroscopy is used to characterize the cavity system, showing a large coupling (g₀/2220 kHz) between the fundamental optical cavity resonance at ₎/2=195 THz and colocalized mechanical resonances at frequency ₌/29. 3 GHz.
Safavi‐Naeini et al. (Mon,) studied this question.