A new ferroelectric memory device, metal-ferroelectric-semiconductor transistor

The ferroelectric field effect has successfully been demonstrated on a bulk semiconductor (silicon) using a thin ferroelectric film of bismuth titanate (Bi <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> Ti <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</inf> ) deposited onto it by RF sputtering. A new memory device, the metal-ferroelectric-semiconductor transistor (MFST); has been fabricated. This device utilizes the remanent polarization of a ferroeletric thin film to control the surface conductivity of a bulk semiconductor substrate and perform a memory function. The capacitance-voltage characteristics of the metal-ferroelectric-semiconductor structure were employed to study the memory behavior. The details of the study together with a preliminary results on the MFST are presented.