Vacancy ordering of Ga2Se3 films by molecular beam epitaxy

Ga2Se3 films have been grown by molecular beam epitaxy. Single-crystal Ga2Se3 films were obtained for the first time on (001) GaP substrates at a substrate temperature of 550 °C and at a VI/III flux ratio greater than 15. Extra diffraction spots with weak intensity were observed in reflection high-energy electron diffraction patterns of the Ga2Se3 films grown at a VI/III ratio above 150. These extra spots were also observed in the transmission electron diffraction pattern. The extra points are attributed to the ordering of native Ga vacancies in the defect zinc blende structure.