Resistive switching in transition-metal oxides has garnered much attention for emerging applications such as memristive nonvolatile memory and neuromorphic computing, yet the effect of filament formation in the metal-insulator transition (MIT) in Mott/Peierls materials has not. The authors study the resistive-switching properties of VO₂ and V₂O₃ nanodevices, observing that multiple MITs appear when a high enough voltage is applied. The hysteresis of these MITs provides an extra mechanism for memory applications, which could offer additional functionalities in memristive hardware.
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Valle et al. (2017) studied this question.
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