The two widely accepted mechanisms of the insulator-metal Mott--Hubbard transitions which have been considered up until now are driven by the band-filling or bandwidth effects. We found a different mechanism of the Mott--Hubbard insulator-metal transition, which is controlled instead by the changes in the Mott--Hubbard energy U. In contrast to the changes in the bandwidth W in the ``bandwidth control'' scenario or to the variations of the band-filling n parameter in the ``band-filling'' scenario, a dramatic decrease in the Mott--Hubbard energy U plays the key role in this mechanism. We have experimentally observed this type of the insulator metal transition in the transition metal oxide BiFeO₃. The decrease in the Mott--Hubbard energy is caused by the high-spin--low-spin crossover in the electronic d shell of $3d$ transition metal ion Fe³⁺ with d⁵ configuration under high pressure. The pressure-induced spin crossover in BiFeO₃ was investigated and confirmed by synchrotron x-ray diffraction, nuclear forward scattering, and x-ray emission methods. The insulator-metal transition at the same pressures was found by the optical absorption and dc resistivity measurements.
No takes yet. Share an insight, caveat, or question.
Gavriliuk et al. (2008) studied this question.
Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context: