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April 7, 2008Applied Physics Letters382 citationsOpen Access

Optical band gap of BiFeO3 grown by molecular-beam epitaxy

JIJon F. IhlefeldNPNikolas J. PodrazaZLZi‐Kui Liu

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Abstract

Bi Fe O 3 thin films have been deposited on (001) SrTiO3 substrates by adsorption-controlled reactive molecular-beam epitaxy. For a given bismuth overpressure and oxygen activity, single-phase BiFeO3 films can be grown over a range of deposition temperatures in accordance with thermodynamic calculations. Four-circle x-ray diffraction reveals phase-pure, epitaxial films with ω rocking curve full width at half maximum values as narrow as 29arcsec (0.008°). Multiple-angle spectroscopic ellipsometry reveals a direct optical band gap at 2.74eV for stoichiometric as well as 5% bismuth-deficient single-phase BiFeO3 films.

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Cite This Study

Ihlefeld et al. (2008) studied this question.

synapsesocial.com/papers/6a20109635281a23f90ddf0chttps://doi.org/10.1063/1.2901160
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