Impurity-assisted Auger recombination in semiconductors

I have developed a theory of impurity-assisted Auger recombination in semiconductors. It is found that the impurity-assisted process is predominant over the pure collision and the phonon-assisted Auger process in the hole concentration range of p10^19 cm^-3, especially when the temperature is below 300 K. The theory is applied to p-GaAs and p-GaSb as typical cases where the band-gap energy is much larger than the spin-orbit splitting and where these are comparable, respectively. The calculated results are in reasonable agreement with experiments reported on both materials with p=10^19 cm^-3 at 77 K.