November 15, 1979Applied Physics LettersOpen Access

The temperature dependence of band-to-band Auger recombination in silicon

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LHL. HuldtKTH Royal Institute of Technology NNN.G. NilssonObducat (Sweden)KSK G SvantessonKTH Royal Institute of Technology

Abstract

The Auger recombination coefficient has been determined from the decay kinetics of highly excited silicon. It was found to be proportional to T0.6, increasing from 3.0×10−31 to 4.6×10−31 cm6s−1 in the temperature interval 195–372 K.

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Huldt et al. (1979) studied this question.

synapsesocial.com/papers/6a20195e349f479269fbe25a https://doi.org/10.1063/1.90974

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The temperature dependence of band-to-band Auger recombination in silicon

Abstract

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The temperature dependence of band-to-band Auger recombination in silicon

Abstract

Discussion

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Cite This Study

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