Bulk-energy-band structure of TiN: An angle-resolved-photoemission study of the (100) surface

Angle-resolved-photoemission measurements have been performed on the (100) surface of a TiN0.83 crystal. The bulk band structure of TiN1.0 has been calculated using the linear augmented-plane-wave method, and the results are used to interpret the experimental data. The locations and dispersions of the bulk valence bands are mapped out along the Γ→X symmetry line and at various polar angles along the $〈011〉$ azimuth. Emission from a surface-induced state located in a band gap at the Γ point in the surface Brillouin zone has been detected.