We report on the impact of TiN interfaces on the ferroelectricity of nondoped HfO 2 . Ferroelectric properties of nondoped HfO 2 in TiN/HfO 2 /TiN stacks are shown in capacitance–voltage and polarization–voltage characteristics. The Curie temperature is also estimated to be around 500 °C. The ferroelectricity of nondoped HfO 2 clearly appears by thinning HfO 2 film down to ∼35 nm. We directly revealed in thermal treatments that the ferroelectric HfO 2 film on TiN was maintained by covering the top surface of HfO 2 with TiN, while it was followed by a phase transition to the paraelectric phase in the case of the open surface of HfO 2 . Thus, it is concluded that the ferroelectricity in nondoped HfO 2 in this study was mainly driven by both of top and bottom TiN interfaces.
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Nishimura et al. (2016) studied this question.
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