Improved monolithic interferometric semiconductor lasers in Y configuration are reported. When they are operated as electrically tunable light sources, single-longitudinal-mode emission with a very large CW tuning range up to 51 nm is obtained. By using all-quaternary compressively strained multi-quantum-well (MQW) active layers, low DC threshold currents down to <10 mA per segment are also obtained (i.e., <40 mA for the total 1500- mu m-long and branched device being pumped uniformly). Asymmetrical Y laser configurations which exhibit simplified current control schemes allowing for improved wavelength tuning response are studied. Single-current-step tuning spans a range up to 8 nm. In the all-optical wavelength converter operation mode the wide tunability of Y lasers across the whole spectrum of the semiconductor gain profile can be fully exploited.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Schilling et al. (1993) studied this question.
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