Self-consistent physical modeling of set/reset operations in unipolar resistive-switching memories

This Letter deals with a self-consistent physical model for set/reset operations involved in unipolar resistive switching memories integrating a transition metal oxide. In this model, set operation is described in terms of a local electrochemical reduction of the oxide leading to the formation of metallic conductive filaments. Beside, reset operation relies on the thermally assisted destruction of the formed metallic filaments by Joule heating effect. An excellent agreement is demonstrated with numerous published experimental data suggesting that this model can be confidently implemented into circuit simulators for design purpose.