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December 1, 2008

Evidence for threshold switching in the set process of NiO-based RRAM and physical modeling for set, reset, retention and disturb prediction

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CCC. CagliDIDaniele IelminiFNF. Nardi

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Cagli et al. (2008) studied this question.

synapsesocial.com/papers/6a20824155df6adc1bcd45f0https://doi.org/10.1109/iedm.2008.4796678
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