Porous silicon layers grown on nondegenerated p-type silicon electrodes in hydrofluoric acid electrolytes are translucent for visible light, which is equivalent to an increased band gap compared to bulk silicon. It will be shown that a two-dimensional quantum confinement (quantum wire) in the very narrow walls between the pores not only explains the change in band-gap energy but may also be the key to better understanding the dissolution mechanism that leads to porous silicon formation.
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Lehmann et al. (1991) studied this question.
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